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| Power Transistors 2SC5457 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 7.30.1 1.80.1 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 0.8max q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25C) Ratings 500 500 400 7 6 3 1.2 30 1.0 150 -55 to +150 Unit V V V V A 2.50.1 0.930.1 1.00.1 0.10.05 0.50.1 0.750.1 2.30.1 4.60.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 1 2 3 1:Base 2:Collector 3:Emitter U Type Package Unit: mm 6.50.2 5.35 4.35 1.8 0.75 2.3 2.3 A A W 1 2 3 0.6 0.50.1 2.30.1 C C 1:Base 2:Collector 3:Emitter EIAJ:SC-63 U Type Package (Z) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1.5A, IB1 = 0.15A, IB2 = - 0.3A, VCC = 200V 10 1.0 3.0 0.3 400 10 8 40 1.0 1.5 V V MHz s s s min typ max 100 100 Unit A A V 6.0 5.50.2 13.30.3 1.00.2 s Features 1 Power Transistors PC -- Ta 50 2SC5457 Area of safe operation (ASO) 100 Non repetitive pulse TC=25C Collector power dissipation PC (W) Collector current IC (A) 40 30 (1) (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (PC=4.5W) (3) Without heat sink (PC=1.0W) 30 10 3 1 0.3 0.1 0.03 0.01 ICP IC t=100s 1ms 10ms DC 20 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 1 3 10 30 100 300 1000 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 2 |
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